Understanding the complementary resistive switching in egg albumen-based single sandwich structure with non-inert Al electrode

Abstract The concept of complementary resistive switching (CRS) has been proposed as a potential solution for mitigating the unwanted sneak path current intrinsic to large-scale crossbar memory arrays. In this study, CRS devices based on egg albumen are fabricated using non-inert Al layers top electrodes (TE). Al/Albumen/indium tin oxide (ITO) single sandwich structure achieves stable and reproducible behavior without requiring forming process. application compliance leads an evolution from bipolar (BRS). Furthermore, BRS analog feature enables emulation synaptic functions, like paired-pulse facilitation (PPF) depression (PPD). Our systematic in-depth analyses demonstrate that is due interfacial Schottky barriers originating electrode oxidation. Consequently, resistance in albumen-based cells with inert Pt can further validate model. These findings provide significant insight into role contribute comprehensive understanding mechanism, which may facilitate development high-performance biodevices.